Evaluation of Operating Margin and Switching Probability of Voltage- Controlled Magnetic Anisotropy Magnetic Tunnel Junctions

Origin of easy magnetization switching in magnetic tunnel junctions with voltage-controlled interfacial anisotropy

Spin-polarized currents represent an efficient tool for manipulating ferromagnetic nanostructures but the critical current density necessary for the magnetization switching is usually too high for applications. Here we show theoretically that, in magnetic tunnel junctions having electric-field-dependent interfacial anisotropy, the critical density may reduce down to a very low level (~10(4) A c...

Temperature dependence of the voltage-controlled perpendicular anisotropy in nanoscale MgO|CoFeB|Ta magnetic tunnel junctions

Voltage-controlled interlayer coupling in perpendicularly magnetized magnetic tunnel junctions

Magnetic interlayer coupling is one of the central phenomena in spintronics. It has been predicted that the sign of interlayer coupling can be manipulated by electric fields, instead of electric currents, thereby offering a promising low energy magnetization switching mechanism. Here we present the experimental demonstration of voltage-controlled interlayer coupling in a new perpendicular magne...

synthesis of amido alkylnaphthols using nano-magnetic particles and surfactants

we used dbsa and nano-magnetic for the synthesis of amido alkylnaphtols.

Memristive switching of MgO based magnetic tunnel junctions

The search for nonvolatile memory concepts has a massive impact on the development of nanoscopic systems with adjustable electrical properties. Capacitor-like structures composed of insulating materials sandwiched between metallic electrodes are envisioned to overcome the limitations associated with conventional charge storage devices and may open the road to neuromorphic computing. Together wi...